Author Correction for Wafer-Scale Epitaxy Growth Study
Correction issued for unit labeling error in high-mobility p-type boron carbon nitride research.
1Correction of Technical Data
The original research article regarding wafer-scale epitaxy growth of high-mobility p-type boron carbon nitride, published on 30 September 2026, required a formal correction. The update addresses a specific unit labeling error found in Figure 5d. This ensures the integrity of the reported experimental data for future academic and industrial reference.
2Unit Labeling Discrepancy Identified
The y-axis label for Figure 5d was initially published as I d (A µm –1). The corrected version now displays the accurate unit as I d (mA µm –1). This adjustment corrects the magnitude of the current density measurement, which is critical for interpreting the electronic performance of the synthesized material.
3Scope of the Update
The editorial team has applied this correction to both the HTML and PDF versions of the article hosted on the Nature platform. Researchers and engineers relying on this study for semiconductor development should ensure they are referencing the updated version to maintain accuracy in their own material science and device fabrication projects.
4Collaborative Research Framework
The study involved a multi-institutional collaboration across Japan and Taiwan. Key contributors include researchers from The University of Tokyo, National Taiwan University, and the National Institute for Materials Science. This wide-reaching partnership underscores the complexity of wafer-scale epitaxy processes and the rigorous peer-review standards required for high-impact materials science publications.
5Material Science Context
Boron carbon nitride is a significant material in the development of next-generation semiconductors. High-mobility p-type characteristics are essential for creating efficient electronic components. The precision of measurement units in such studies is vital, as even minor discrepancies can lead to significant misinterpretations of the material's carrier mobility and overall electrical efficiency.
6Institutional Involvement
The research involved various specialized centers, including the Center for Heterogeneous and Innovative Post-Silicon Materials at Chang Gung University and the National Center for Instrumentation Research. These facilities provide the necessary infrastructure for advanced epitaxy growth. The correction reflects the ongoing commitment of these institutions to maintaining precise scientific documentation standards.
7Impact on Semiconductor Development
Accurate reporting of current density is fundamental for evaluating the viability of new materials in post-silicon applications. By correcting the unit from Amperes to milliamperes, the authors clarify the performance metrics of their p-type boron carbon nitride. This transparency is essential for teams working on scaling these materials for commercial semiconductor manufacturing.
8Maintaining Academic Integrity
Formal corrections serve as a mechanism to uphold the reliability of scientific literature. By promptly addressing the labeling error in Figure 5d, the authors and the journal maintain the credibility of the findings. This process ensures that the global research community can continue to build upon these results with full confidence.
Original article: Nature — Author Correction for Wafer-Scale Epitaxy Growth Study