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GlobalFoundries Unveils FDX Fusion for 7nm-Class Performance Without EUV

New planar transistor technology targets edge AI and connectivity markets by 2028.

Tom's Hardware4 min

1Strategic Shift in Manufacturing

GlobalFoundries is pivoting away from traditional FinFET development to introduce FDX Fusion, a new manufacturing process based on FD-SOI technology. Eight years after abandoning 7nm FinFET, the company aims to deliver 7nm-class performance. This approach avoids the high costs associated with extreme ultraviolet lithography, targeting commercial production by 2028.

2Core Technology and Architecture

FDX Fusion utilizes advanced planar transistors and strained silicon substrates to achieve 8nm-class logic density. By leveraging adaptive body biasing, the platform provides significant power and performance benefits. The process relies on deep ultraviolet lithography, employing aggressive optical patterning techniques to reach performance levels comparable to conventional 8nm-class FinFET nodes.

3Performance and Power Targets

The company claims FDX Fusion will offer 30% higher performance and 40% lower power consumption compared to its existing 22FDX generation. These metrics are achieved at iso-performance levels with adaptive body biasing enabled. The technology is designed to balance digital gate density with the specific power requirements of modern edge applications.

4Targeting Connectivity and Edge AI

The platform is specifically optimized for connectivity applications, including Wi-Fi, Bluetooth, and cellular systems. Additionally, it targets edge AI processors and automotive radar, where 81GHz performance is critical. By supporting high-frequency mmWave and signal paths, the technology aims to serve data centers by facilitating efficient signal amplification and data recovery circuits.

5Competitive Cost Advantage

A primary value proposition of FDX Fusion is the elimination of EUV tools, which significantly reduces mask set costs and overall operating expenses for customers. While die sizes may be larger than those produced on 7nm FinFET nodes, the total system-level efficiency, measured in TOPS per watt, remains highly competitive for designers.

6Density and Technical Specifications

FDX Fusion achieves a logic density of 14 million gates per square millimeter, translating to 56 million transistors per square millimeter. This density is comparable to Samsung’s 8nm-class nodes. GlobalFoundries is currently refining gate oxide engineering and metal pitches to optimize performance while maintaining the cost-effective nature of the planar manufacturing process.

7The Role of Adaptive Biasing

Adaptive body biasing remains a cornerstone of the FDX platform, allowing designers to tune performance dynamically. This feature enables chips to match the power and performance profiles of 16nm or 12nm-class technologies while utilizing the FDX Fusion architecture. It provides the flexibility required for complex mixed-signal designs and high-performance analog circuits.

8Market Positioning and Naming

GlobalFoundries chose the name FDX Fusion to emphasize the platform's versatility rather than a specific node number. By avoiding a strict numerical label, the company provides customers the optionality to build diverse components, from simple microcontrollers to complex radar systems, without being constrained by the rigid definitions of traditional foundry naming conventions.

9Research and Development Focus

Approximately 50% of the research and development budget for FDX Fusion is dedicated to transistor-level improvements, specifically through strained substrate techniques. The remaining 50% is focused on optimizing contacted gate pitches and metal layers. These efforts are critical to achieving the necessary density and performance without relying on advanced EUV tools.

10Data Center Connectivity Strategy

In the data center segment, GlobalFoundries focuses on power and connectivity rather than CPUs. FDX Fusion will complement existing silicon-germanium technologies by providing options for signal paths that feed into compute chips. This includes supporting optical diodes and circuits that amplify weak electrical signals, essential for modern high-speed data transmission environments.

11Customer Adoption and Scaling

GlobalFoundries reports that over 90 customers are currently ramping up production using its existing FD-SOI technology. This established ecosystem provides the foundation for the FDX Fusion rollout. By building on this traction, the company expects to transition existing clients to the new platform as they seek to enhance their product portfolios.

12Future Outlook and Impact

The move to FDX Fusion represents a strategic decision to prioritize cost-effective, high-performance solutions for the physical AI era. By 2028, the company expects this technology to be a standard choice for designers needing efficiency without the extreme costs of EUV. Success will depend on meeting these performance targets in silicon.

Original article: Tom's Hardware — GlobalFoundries Unveils FDX Fusion for 7nm-Class Performance Without EUV